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IRFP254N, SiHFP254N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 100 17 44 Single
D
FEATURES
250 0.125
* * * * * * * *
Advanced Process Technology Dynamic dV/dt Rating 175 C Operating Temperature Fully Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-247
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
G
S D G S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP254NPbF SiHFP254N-E3 IRFP254N SiHFP254N
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 250 20 23 16 92 1.5 300 14 22 220 7.4 - 55 to + 175 300d 10 1.1 UNIT V
A W/C mJ A mJ W V/ns C lbf * in N*m
TC = 25 C
for 10 s 6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 3.1 mH, RG = 25 , IAS = 14 A, VGS = 10 V. c. ISD 14 A, dI/dt 460 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91213 S-Pending-Rev. A, 24-Jun-08 www.vishay.com 1
WORK-IN-PROGRESS
IRFP254N, SiHFP254N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.68 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 150 C VGS = 10 V ID = 14 Ab VDS = 25 V, ID = 14 A
250 2.0 15
0.33 -
4.0 100 25 250 0.125 -
V V/C V nA A S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
-
2040 260 62 14 34 37 29 5.0 13
100 17 44 nH ns nC pF
ID = 14 A, VDS = 200 V, see fig. 6 and 13b VGS = 10 V VDD = 125 V, ID = 14 A, RG = 3.6 , see fig. 10b
-
Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
-
210 1.7
23 A 92 1.3 310 2.6 V ns nC
G
S
TJ = 25 C, IS = 14 A, VGS = 0 Vb TJ = 25 C, IF = 14 A, dI/dt = 100 A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 s; duty cycle 2 %.
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Document Number: 91213 S-Pending-Rev. A, 24-Jun-08
IRFP254N, SiHFP254N
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TJ = 175 C
10
Bottom
10
1
4.5 V
TJ = 25 C
0.1 0.1
20 s PULSE WIDTH TJ = 25 C 100 10 1 VDS, Drain-to-Source Voltage (V)
1 4.0
VDS = 50 V 20 s PULSE WIDTH 5.0 6.0 8.0 7.0 VGS, Gate-to-Source Voltage (V) 9.0
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
Top
ID, Drain-to-Source Current (A)
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V
rDS(on), Drain-to-Source On Resistance (Normalized)
4.0
ID = 23 A
3.0
10 4.5 V
2.0
1.0
1 0.1 1
20 s PULSE WIDTH TJ = 175 C 10 100 VDS, Drain-to-Source Voltage (V)
0.0 -60 -40 -20 0 20 40
VGS = 10 V 60 80 100 120 140 160
TJ, Junction Temperature ( C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91213 S-Pending-Rev. A, 24-Jun-08
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IRFP254N, SiHFP254N
Vishay Siliconix
4000 VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd Ciss f = 1 MHz SHORTED
100
ISD, Reverse Drain Current (A)
3000 C, Capacitance (pF)
TJ = 175 C 10
2000 Coss
1 TJ = 25 C
1000
Crss
0 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
0.1 0.2
VGS = 0 V 0.8 0.4 1.0 0.6 VSD, Source-to-Drain Voltage (V) 1.2
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 14 A VGS, Gate-to-Source Voltage (V) VDS = 200 V VDS = 125 V VDS = 50 V
1000 OPERATING IN THIS AREA LIMITED BY RDS(on) 100
16
12
ID, Drain Current (A)
10
100 s 1 ms
8
1 4 For Test Circuit See Fig. 13 0 20 40 60 80 100 TC = 25 C TJ = 175 C Single Pulse 1 10 100 10 ms
0
0.1
1000
10000
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91213 S-Pending-Rev. A, 24-Jun-08
IRFP254N, SiHFP254N
Vishay Siliconix
RD
25 VDS VGS 20 ID, Drain Current (A) RG
D.U.T. + - VDD
15
VGS
Pulse width 1 s Duty factor 0.1 %
10
Fig. 10a - Switching Time Test Circuit
VDS 90 %
5
0 25 50 75 100 125 150 175 10 % VGS td(on) tr td(off) tf TC, Case Temperature (C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response (ZthJC)
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01
(THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC
0.01 0.00001
0.0001
0.001
t 1, Rectangular Pulse Duration (s)
0.01
0.1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91213 S-Pending-Rev. A, 24-Jun-08
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IRFP254N, SiHFP254N
Vishay Siliconix
15 V
VDS tp
VDS
L
Driver
RG VGS
D.U.T. IAS tp 0.01
+ A - VDD
A
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
600 TOP EAS, Single Pulse Avalanche Energy (mJ) 500 BOTTOM ID 5.6 A 9.8 A 14 A
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 k
12 V
VGS QGS
QG
0.2 F
0.3 F
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test
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Document Number: 91213 S-Pending-Rev. A, 24-Jun-08
IRFP254N, SiHFP254N
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode
forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices and 3 V drive devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91213.
Document Number: 91213 S-Pending-Rev. A, 24-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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